Electron spin resonance study of radiation-induced paramagnetic defects in silicon dioxide grown on (100) silicon substrates

Miscellaneous · Fri Jan 01 00:00:00 EST 1988

OSTI ID:7197434

Kim, Y Y

Electron-spin-resonance spectroscopy was used to investigate radiation-induced point defects in Si/SiO{sub 2} structures with (100) silicon substrates. It was found that the radiation-induced point defects are quite similar to defects generated in Si/SiO{sub 2} structures grown on (111) silicon substrates. In both cases an oxygen-deficient silicon center, the E{prime} defect, appears to be responsible for trapped positive charge. In both cases trivalent silicon defects (P{sub b} centers) are primarily responsible for radiation-induced interface states. In earlier electron spin resonance studies of unirradiated (100) substrate capacitors, two types of P{sub b} centers were observed; in oxides prepared in several different ways only one of these centers, the P{sub b0} defect, is generated in large numbers by ionizing radiation.

• Research Organization: Pennsylvania State Univ., University Park, PA (USA)
• OSTI ID: 7197434
• Resource Relation: Other Information: Thesis (Ph. D.)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
POINT DEFECTS
ELECTRON SPIN RESONANCE
SEMICONDUCTOR JUNCTIONS
PHYSICAL RADIATION EFFECTS
SILICON
SILICON OXIDES
RADIOINDUCTION
SUBSTRATES
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
JUNCTIONS
MAGNETIC RESONANCE
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
RESONANCE
SEMIMETALS
SILICON COMPOUNDS
360605* - Materials- Radiation Effects