Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substrates

Journal Article · Sat Oct 01 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341494· OSTI ID:6956920

Kim, Y Y; Lenahan, P M

We have used electron-spin resonance to investigate radiation-induced point defects in Si/SiO/sub 2/ structures with (100) silicon substrates. We find that the radiation-induced point defects are quite similar to defects generated in Si/SiO/sub 2/ structures grown on (111) silicon substrates. In both cases, an oxygen-deficient silicon center, the E' defect, appears to be responsible for trapped positive charge. In both cases trivalent silicon (P/sub b/ centers) defects are primarily responsible for radiation-induced interface states. In earlier electron-spin-resonance studies of unirradiated (100) substrate capacitors two types of P/sub b/ centers were observed; in oxides prepared in three different ways only one of these centers, the P/sub b//sub 0/ defect, is generated in large numbers by ionizing radiation.

• Research Organization: Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
• OSTI ID: 6956920
• Journal Information: J. Appl. Phys.; (United States), Vol. 64:7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICA
PHYSICAL RADIATION EFFECTS
SILICON
CRYSTAL DEFECTS
E CENTERS
ELECTRON SPIN RESONANCE
ELECTRONIC STRUCTURE
MOSFET
POINT DEFECTS
CHALCOGENIDES
COLOR CENTERS
CRYSTAL STRUCTURE
ELEMENTS
FIELD EFFECT TRANSISTORS
MAGNETIC RESONANCE
MINERALS
MOS TRANSISTORS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
RESONANCE
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
VACANCIES
360605* - Materials- Radiation Effects