Hole traps and trivalent silicon centers in metal/oxide/silicon devices

Journal Article · Tue May 15 00:00:00 EDT 1984 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332937· OSTI ID:6612915

Lenahan, P M; Dressendorfer, P V

We report electron spin resonance (ESR) measurements of E'-center (a ''trivalent silicon'' center in SiO/sub 2/) density as well as capacitance versus voltage (C-V) measurements on ..gamma..-irradiated metal/oxide/silicon (MOS)= structures. We also report a considerable refinement of earlier ESR measurements of the dependence of radiation-induced P/sub b/ -center (a ''trivalent silicon'' center at the Si/SiO/sub 2/ interface) occupation as a function of the Fermi level at the Si/SiO/sub 2/ interface. These measurements indicate that the P/sub b/ centers are neutral when the Fermi level is at mid-gap. Since the P/sub b/ centers are largely responsible for the radiation-induced interface states, one may take ..delta..V/sub mg/ C/sub ox//e (where ..delta..V/sub mg/ is the ''mid-gap'' C-V shift, C/sub ox/ is the oxide capacitance, and e is the electronic charge) as the density of holes trapped in the oxide. We find that radiation-induced E' density equals ..delta..V/sub mg/ C/sub ox//e in oxides grown in both stream and dry oxygen. Etch-back experiments demonstrate that the E' centers are concentrated very near the Si/SiO/sub 2/ interface (as are the trapped holes). Furthermore, we have subjected irradiated oxide structures to a sequence of isochronal anneals and find that the E' density and ..delta..V/sub mg/ annealing characteristics are virtually identical. We conclude that the E' centers are largely responsible for the deep hole traps in thermal SiO/sub 2/ on silicon.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6612915
• Journal Information: J. Appl. Phys.; (United States), Vol. 55:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
SILICA
E CENTERS
ELECTRIC CONDUCTIVITY
ELECTRON SPIN RESONANCE
ENERGY LEVELS
FERMI LEVEL
GAMMA RADIATION
HOLES
INTERFACES
MODIFICATIONS
SEMICONDUCTOR JUNCTIONS
SILICON
TRAPS
CHALCOGENIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
IONIZING RADIATIONS
JUNCTIONS
MAGNETIC RESONANCE
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
POINT DEFECTS
RADIATION EFFECTS
RADIATIONS
RESONANCE
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
VACANCIES
360605* - Materials- Radiation Effects
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems