Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices
Structural damage at the Si/SiO/sub 2/ interface in metal-oxide-semiconductor devices resulting from the emission of electrons from the silicon into the oxide involves an amphoteric trivalent silicon defect, termed P/sub b/. The P/sub b/ center is responsible for the electron injection induced interface states. The effects of electron injection are similar to those of ionizing radiation to the extent that in both cases P/sub b/ centers are generated at the Si/SiO/sub 2/ interface. However, the effects are not identical; ionizing radiation creates another trivalent silicon defect, termed E', in the oxide. We are unable to observe any E' generation in oxides subjected to electron injection. There appears to be a strong correlation between the number of trapped electrons and the electron injection induced P/sub b/ center interface states; this observation suggests that the trapping of electrons in the bulk of the oxide is in some way related to the creation of the P/sub b/ center interface state defects. In addition, dry oxides subjected to a deuterium/nitrogen anneal exhibit less electron trapping than otherwise identical oxides which have been subjected to a hydrogen/nitrogen anneal. This observation is consistent with the idea that a hydrogen bond breaking event may be involved in electron capture.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5810480
- Report Number(s):
- SAND-85-0346C; ON: DE85009502
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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INTERFACES
PHYSICAL RADIATION EFFECTS
ANNEALING
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