Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices

Technical Report · Tue Jan 01 04:00:00 EST 1985

OSTI ID:5810480

Mikawa, R E; Lenahan, P M

Structural damage at the Si/SiO/sub 2/ interface in metal-oxide-semiconductor devices resulting from the emission of electrons from the silicon into the oxide involves an amphoteric trivalent silicon defect, termed P/sub b/. The P/sub b/ center is responsible for the electron injection induced interface states. The effects of electron injection are similar to those of ionizing radiation to the extent that in both cases P/sub b/ centers are generated at the Si/SiO/sub 2/ interface. However, the effects are not identical; ionizing radiation creates another trivalent silicon defect, termed E', in the oxide. We are unable to observe any E' generation in oxides subjected to electron injection. There appears to be a strong correlation between the number of trapped electrons and the electron injection induced P/sub b/ center interface states; this observation suggests that the trapping of electrons in the bulk of the oxide is in some way related to the creation of the P/sub b/ center interface state defects. In addition, dry oxides subjected to a deuterium/nitrogen anneal exhibit less electron trapping than otherwise identical oxides which have been subjected to a hydrogen/nitrogen anneal. This observation is consistent with the idea that a hydrogen bond breaking event may be involved in electron capture.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5810480
• Report Number(s): SAND-85-0346C; ON: DE85009502
• Country of Publication: United States
• Language: English

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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BEAMS
CHALCOGENIDES
ELECTRON BEAMS
ELECTRON SPIN RESONANCE
ELEMENTS
HEAT TREATMENTS
INTERFACES
LEPTON BEAMS
MAGNETIC RESONANCE
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RESONANCE
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES