Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices

Journal Article · Sat Mar 15 00:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336390· OSTI ID:6117822

Mikawa, R E; Lenahan, P M

We find that electrons emitted from silicon into the oxide of metal-oxide-silicon devices generate amphoteric trivalent silicon (P/sub b/ center) defects at the Si/SiO/sub 2/ interface. The P/sub b/ centers are generated in numbers approximately equal to that of the electron injection induced interface states. The effects of electron injection are similar to those of ionizing radiation to the extent that in both cases P/sub b/ centers are generated at the Si/SiO/sub 2/ interface. However, the effects are not identical; ionizing radiation creates another trivalent silicon defect, termed E', in the oxide. We are unable to observe any E' generation in oxides subjected to electron injection. There appears to be a strong correlation between the number of trapped electrons and the electron injection induced P/sub b/ center interface states; this observation suggests that the trapping of electrons in the bulk of the oxides is in some way related to the creation of the P/sub b/ center interface state defects. We find that dry oxides subjected to a deuterium/nitrogen anneal exhibit less electron trapping than otherwise identical oxides which have been subjected to a hydrogen/nitrogen anneal. This observation is consistent with the idea that a hydrogen bond breaking event may be involved in electron capture.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6117822
• Journal Information: J. Appl. Phys.; (United States), Vol. 59:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
SEMICONDUCTOR JUNCTIONS
CRYSTAL DEFECTS
ELECTRON SPIN RESONANCE
ELECTRONIC STRUCTURE
SILICON
ELECTRON EMISSION
ANNEALING
DAMAGE
DEUTERIUM
ELECTRON BEAM INJECTION
ELECTRON COLLISIONS
FERMI LEVEL
GAMMA RADIATION
HOLES
HYDROGEN
INTERFACES
MOSFET
SILICA
TRAPPING
BEAM INJECTION
CHALCOGENIDES
COLLISIONS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
ENERGY LEVELS
FIELD EFFECT TRANSISTORS
HEAT TREATMENTS
HYDROGEN ISOTOPES
IONIZING RADIATIONS
ISOTOPES
JUNCTIONS
LIGHT NUCLEI
MAGNETIC RESONANCE
MINERALS
MOS TRANSISTORS
NONMETALS
NUCLEI
ODD-ODD NUCLEI
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
RADIATIONS
RESONANCE
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON COMPOUNDS
SILICON OXIDES
STABLE ISOTOPES
TRANSISTORS
360603* - Materials- Properties
420800 - Engineering- Electronic Circuits & Devices- (-1989)