Analysis of capacitance measurements on silicon microstrip detectors
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6974272
- Univ. of California, Santa Cruz, CA (United States); and others
The authors present an analysis of the total strip capacitance of double-sided, AC-coupled silicon microstrip detectors. They evaluate the radiation hardness and the noise contribution of different strip geometries. They comment on a serious failure mode.
- OSTI ID:
- 6974272
- Report Number(s):
- CONF-931051--
- Conference Information:
- Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 41:4Pt1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITANCE
COMPUTER CODES
COMPUTERIZED SIMULATION
DATA
DATA ANALYSIS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FAILURES
HARDENING
HIGH ENERGY PHYSICS
INFORMATION
MEASURING INSTRUMENTS
NUMERICAL DATA
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PHYSICS
RADIATION DETECTORS
RADIATION EFFECTS
RADIATION HARDENING
S CODES
SEMICONDUCTOR DETECTORS
SI SEMICONDUCTOR DETECTORS
SIMULATION
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITANCE
COMPUTER CODES
COMPUTERIZED SIMULATION
DATA
DATA ANALYSIS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FAILURES
HARDENING
HIGH ENERGY PHYSICS
INFORMATION
MEASURING INSTRUMENTS
NUMERICAL DATA
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PHYSICS
RADIATION DETECTORS
RADIATION EFFECTS
RADIATION HARDENING
S CODES
SEMICONDUCTOR DETECTORS
SI SEMICONDUCTOR DETECTORS
SIMULATION