Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Analysis of capacitance measurements on silicon microstrip detectors

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6974272
; ;  [1]
  1. Univ. of California, Santa Cruz, CA (United States); and others
The authors present an analysis of the total strip capacitance of double-sided, AC-coupled silicon microstrip detectors. They evaluate the radiation hardness and the noise contribution of different strip geometries. They comment on a serious failure mode.
OSTI ID:
6974272
Report Number(s):
CONF-931051--
Conference Information:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 41:4Pt1
Country of Publication:
United States
Language:
English

Similar Records

Capacitance measurements on silicon microstrip detectors
Conference · Sun Aug 01 00:00:00 EDT 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:5923077

Tracking and radiation tests of silicon microstrip detectors
Conference · Tue Feb 04 23:00:00 EST 1992 · AIP Conference Proceedings (American Institute of Physics); (United States) · OSTI ID:6705039

Signal-to-noise in silicon microstrip detectors with binary readout
Journal Article · Tue Aug 01 00:00:00 EDT 1995 · IEEE Transactions on Nuclear Science · OSTI ID:129166