Capacitance measurements on silicon microstrip detectors

Conference · Sun Aug 01 04:00:00 EDT 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5923077

Masciocchi, S ^[1]; Peisert, A ^[2]; Roenqvist, C ^[3]; Vite, D; Wheadon, R ^[4]

---

1. INFN, Milano (Italy) CERN, Geneva (Switzerland)
2. INFN, Padova (Italy)
3. SEFT, Helsinki (Finland)
4. Imperial Coll., London (United Kingdom)

Load capacitance is the most significant parameter determining the noise level of charge-sensitive readout electronics. This is the capacitance between the detecting electrode and all other conductors in the system. For the case of silicon microstrip detectors, the significant contributions are those from the other strips on the detector surface and also from the backplane. This article presents the results of capacitance measurements on both the junction and ohmic sides of detectors, and with various geometries. Double-sided detectors with a second metal layer and different readout patterns were also studied. In addition, the authors present measurements of microstrip capacitance after irradiation with both neutrons and photons made as part of the research by the RD20 collaboration into all aspects of the use of silicon microstrips at the Large Hadron Collider at CERN.

• OSTI ID: 5923077
• Report Number(s): CONF-921005--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 40:4 part 1
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
430303 -- Particle Accelerators-- Experimental Facilities & Equipment
440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACCELERATORS
CAPACITANCE
ELECTRICAL PROPERTIES
HIGH ENERGY PHYSICS
IRRADIATION
MEASURING INSTRUMENTS
NOISE
PHYSICAL PROPERTIES
PHYSICS
RADIATION DETECTORS
READOUT SYSTEMS
SEMICONDUCTOR DETECTORS
SI SEMICONDUCTOR DETECTORS
USES