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Tracking and radiation tests of silicon microstrip detectors

Conference · · AIP Conference Proceedings (American Institute of Physics); (United States)
OSTI ID:6705039
; ; ; ; ; ; ; ; ; ;  [1]; ; ;  [2];  [3]
  1. Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States)
  2. Department of Physics, Yale University, New Haven, Connecticut 06511 (United States)
  3. Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242 (United States)
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We have measured a signal-to-noise of 37:1 at room temperature for 227 GeV pions at Fermilab on the n(ohmic)-side of a Hamamatsu AC-coupled double-sided silicon microstrip detector with 0.64 cm long strips. Position resolutions at normal incidence of 3.5[plus minus]0.4 [mu]m (10.4[plus minus]0.5 [mu]m) were obtained for the p-side (n-side) which had 25 [mu]m (50 [mu]m) pitch and 50 [mu]m readout. The effects of radiation damage on the n-side have also been measured with a [sup 60]Co source. Phase-gain measurements imply that the accumulation layer bias capacitance and AC-coupling capacitance are constant with dose up to 5 Mrad with values of 1.2 pf and 12 pf per strip respectively. The bias resistance per strip has a value of [similar to]0.8 M[Omega] at 0 and 5 Mrad and [similar to]0.4 M[Omega] at doses of 20--100 Krad.
OSTI ID:
6705039
Report Number(s):
CONF-920837--
Conference Information:
Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 272:2
Country of Publication:
United States
Language:
English

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Related Subjects

440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
662420 -- Properties of Mesons & Meson Resonances-- (1992-)
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
CALCULATION METHODS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
GAMMA RADIATION
GEV RANGE
GEV RANGE 100-1000
IONIZING RADIATIONS
MEASURING INSTRUMENTS
MONTE CARLO METHOD
RADIATION DETECTORS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMIMETALS
SIGNAL-TO-NOISE RATIO
SILICON
TESTING