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A new microstrip detector with double-sided readout

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
OSTI ID:6606904
;  [1]; ; ; ; ; ; ; ;  [2]; ; ;  [3];  [4]; ; ;  [5];  [6]; ;  [7]
  1. SI, Oslo (NO)
  2. CERN, Geneva (CH)
  3. Institute of Nuclear Physics, Cracow (Poland)
  4. LAL, Orsay (FR)
  5. CRN, Strasbourg (FR)
  6. INFN, Milan (IT)
  7. Helsinki Univ. (Finland)

A Si {mu}-strip detector has been developed with 50 {mu}m pitch strips on both p- and n-side, using the principle of capacitive coupling between p{sup +} diode strips---respectively n{sup +} strips and the metallization strips which connect to the front-end preamplifiers. The detector is biased on both sides via polysilicon resistors connecting each p{sup +} or n{sup +} line to a common bias bus. To allow ohmic separation at the n-side, the accumulation layer of electrons has to be disrupted between the n{sup +} strips. This has been achieved in three different ways: separate polysilicon lines on thick oxide between two adjacent n{sup +} lines to break the conducting accumulation layer by externally induced field depletion or using the metal lines of the n{sup +} strips on thick oxide and on thin oxide. Results on 20 {times} 20 mm{sup 2} test devices are presented.

OSTI ID:
6606904
Report Number(s):
CONF-900143--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:3; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English