Proton irradiation on AC-coupled silicon microstrip detectors

Journal Article · Tue Aug 01 04:00:00 EDT 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.467878· OSTI ID:136885

Unno, Y; Ujiie, N; Hinode, F ^[1]

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1. and others

To test the radiation tolerance of full-size detectors, four large-area AC-coupled single-sided silicon microstrip detectors were fabricated. The detectors had a size of 6 cm x 3.4 cm and were made out of a 300 {mu}m thick, high-resistivity, n-type silicon, simulating the p-side of the double-sided silicon microstrip detectors being developed. The AC coupling layer either a single layer of SiO{sub 2} or double layers of SiO{sub 2} and in combination with the surface passivation of SiO{sub 2} Si{sub 3}N{sub 4}, or Si{sub 3}N{sub 4}. The detectors were irradiated at room temperature by 500 MeV protons at TRIUMF to a fluence of 5.7 x 10{sup 13} protons/cm{sup 2}, promptly stored at 0 C after irradiation, and periodically measured over the following year. The full depletion voltages showed a substantial annealing and a gradual anti-annealing. The result was compared with the predictions of existing damage parameterization. Time variation of other characteristics, such as leakage current, interstrip and coupling capacitances, and strip-edge microdischarges was also followed.

• OSTI ID: 136885
• Report Number(s): CONF-941061--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 4Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
PHYSICAL RADIATION EFFECTS
SI SEMICONDUCTOR DETECTORS
SILICON NITRIDES
SILICON OXIDES
TRIUMF CYCLOTRON