Degradation of silicon ac-coupled microstrip detectors induced by radiation

Journal Article · Wed Dec 01 04:00:00 EST 1993 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.273452· OSTI ID:142391

Bacchetta, N; Gotra, Yu ^[1]; Bisello, D ^[2]; Canali, C ^[3]; Fuochi, P G ^[4]; Paccagnella, A; Verzellesi, G ^[1]

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1. INFN, Padova (Italy)
2. Univ. di Padova (Italy)
3. Univ. di Modena (Italy). Facolta di Ingegneria
4. CNR-FRAE, Bologna (Italy)

Results are presented showing the radiation response of ac-coupled FOXFET biased microstrip detectors and related test patterns to be used in the microvertex detector of the CDF experiment at Fermi National Laboratory. Radiation tolerance of detectors to gamma and proton irradiation has been tested and the radiation induced variations of the dc electrical parameters have been analyzed. Long term post-irradiation behavior of detector characteristics have been studied, and the relevant room temperature annealing phenomena have been discussed.

• OSTI ID: 142391
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 40; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FERMILAB COLLIDER DETECTOR
PHYSICAL RADIATION EFFECTS
SI SEMICONDUCTOR DETECTORS