Short-period (AlAs)(GaAs) superlattice lasers grown by molecular beam epitaxy

Journal Article · Mon Jul 25 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99901· OSTI ID:6973601

Blood, P; Fletcher, E D; Foxon, C T

We have used short-period all-binary (AlAs)(GaAs) superlattices with layers as thin as three monolayers to synthesize the barrier and cladding regions of GaAs quantum well lasers grown by molecular beam epitaxy. By studying the threshold current of single- and double-well devices as a function of cavity length and temperature, we conclude that the optical scattering losses are very low, that the gain-current characteristics are similar to alloy barrier devices, and that there is evidence for current leakage by recombination in the barriers.

• Research Organization: Philips Research Laboratories, Redhill, Surrey RH1 5HA, England
• OSTI ID: 6973601
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 53:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
GAIN
THRESHOLD CURRENT
EXPERIMENTAL DATA
LASER CAVITIES
MOLECULAR BEAM EPITAXY
OPERATION
SUPERLATTICES
AMPLIFICATION
CURRENTS
DATA
ELECTRIC CURRENTS
EPITAXY
INFORMATION
LASERS
NUMERICAL DATA
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)