Observation of stimulated emission in an ultrashort-period nonsymmetric GaAs/AlAs superlattice
Nonsymmetric short-period GaAs/AlAs superlattices, for which the well thickness is at least a factor of 2 larger than the barrier thickness, have been shown to exhibit a direct band gap for any well thickness. These superlattices are characterized by an enhanced intensity of the luminescence as compared to their symmetric indirect-gap counterparts with the same well width, and, thus, may be used as light-emitting devices, in particular, as low-threshold lasers in the red visible spectrum. This conjecture is supported by the observation of stimulated emission at T=80K for a GaAs/AlAs superlattice with six monolayers well and three monolayers barrier width. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204561
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 78; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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