Optical properties of ordered and randomly disordered AlAs/GaAs short-period superlattices
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
- Department of Physics, University of Utah, Salt Lake City, Utah 84112 (United States)
- Bell Northern Research, Limited, P.O. Box 3511, Station C, Ottawa, Ontario, K1Y 4H7 (Canada)
- Department of Physics, University of Sheffield, Sheffield S3 7RH (United Kingdom)
The optical properties of different atomic arrangements of Al[sub 0.5]Ga[sub 0.5]As, deposited by molecular-beam epitaxy and having nominally identical average composition, have been compared. Markedly different signatures are seen in steady-state, time-resolved, and microwave-modulated photoluminescence, photoreflectance, and photoluminescence-excitation spectroscopies for a random pseudobinary alloy and (AlAs)[sub [ital n]](GaAs)[sub 4[minus][ital n]] superlattices where [ital n]=2 (ordered) or [ital n] is randomly chosen (disordered) from the sets [1,2,3] or [0,1,2,3,4]. When [ital n]=[0, 1, 2, 3, or 4] the optical properties are dominated by quantum confinement effects due to the presence of layers with thicknesses up to 14 monolayers. When [ital n]=[1, 2, or 3] the optical properties are consistently described by the presence of disorder-induced localized states and a hopping-assisted recombination mechanism.
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 5119694
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 49:16; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONFINEMENT
ELECTRONIC STRUCTURE
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LUMINESCENCE
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
SUPERLATTICES