Energy levels of very short-period (GaAs) sub n -(AlAs) sub n superlattices

Journal Article · Mon Jul 02 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103576· OSTI ID:6826785

Ge, W; Sturge, M D; Schmidt, W D ^[1]; Pfeiffer, L N; West, K W ^[2]

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1. Department of Physics and Astronomy, Dartmouth College, Hanover, NH (USA)
2. AT T Bell Laboratories, Murray Hill, NJ (USA)

The energy levels of very short-period (GaAs){sub {ital n}}-(AlAs){sub {ital n}} superlattices ({ital n}{le}4) were investigated by photoluminescence (PL). The results show that these superlattices are type II but the lowest conduction bands are {ital X}{sub {ital x},{ital y}} for {ital n}{le}3 and {ital X}{sub {ital z}} for {ital n}=4, respectively. (Here {ital X}{sub {ital z}} is the valley with {bold k} parallel to the growth axis.) In both cases the {ital X} valleys are very close to each other. PL decay, PL excitation, and PL under uniaxial stress confirm this identification. Al{sub 0.5}Ga{sub 0.5}As shows very different behavior, showing that even for {ital n}=1 our samples are true superlattices.

• DOE Contract Number: FG02-87ER45330
• OSTI ID: 6826785
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:1; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC STRUCTURE
ENERGY LEVELS
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LUMINESCENCE
PHOTOLUMINESCENCE
PNICTIDES
SUPERLATTICES