Energy levels of very short-period (GaAs) sub n -(AlAs) sub n superlattices
- Department of Physics and Astronomy, Dartmouth College, Hanover, NH (USA)
- AT T Bell Laboratories, Murray Hill, NJ (USA)
The energy levels of very short-period (GaAs){sub {ital n}}-(AlAs){sub {ital n}} superlattices ({ital n}{le}4) were investigated by photoluminescence (PL). The results show that these superlattices are type II but the lowest conduction bands are {ital X}{sub {ital x},{ital y}} for {ital n}{le}3 and {ital X}{sub {ital z}} for {ital n}=4, respectively. (Here {ital X}{sub {ital z}} is the valley with {bold k} parallel to the growth axis.) In both cases the {ital X} valleys are very close to each other. PL decay, PL excitation, and PL under uniaxial stress confirm this identification. Al{sub 0.5}Ga{sub 0.5}As shows very different behavior, showing that even for {ital n}=1 our samples are true superlattices.
- DOE Contract Number:
- FG02-87ER45330
- OSTI ID:
- 6826785
- Journal Information:
- Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:1; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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