Conduction-band minimum of (GaAs) sub 1 /(AlAs) sub 1 superlattices: Relationship to X minimum of AlAs
Journal Article
·
· Physical Review, B: Condensed Matter; (United States)
- Department of Physics, Dartmouth College, Hanover, New Hampshire (USA)
- AT T Bell Laboratories, Murray Hill, New Jersey (USA)
We show that the conduction-band minimum in a (GaAs){sub 1}/(AlAs){sub 1} superlattice derives from the {ital X}{sub {ital x},}{ital y} minimum of bulk AlAs, not from {ital L} of GaAs as predicted by many theoretical calculations. This is shown by the sign of the shift in the low-temperature photoluminescence under (001) stress, by the relative magnitudes of the shifts under (100) and (110) stress, by the phonon sidebands, and by the observation of a splitting under (100) but not under (110) stress.
- OSTI ID:
- 5340936
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:7; ISSN 0163-1829; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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