Ordered and randomly disordered AlAs/GaAs short-period superlattices

Journal Article · Mon Feb 28 23:00:00 EST 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.587116· OSTI ID:5149076

Arent, D J; Alonso, R; Horner, G; Bode, M; Olson, J M ^[1]; Yin, X; DeLong, M C ^[2]; SpringThorpe, A J; Majeed, A ^[3]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
2. Department of Physics, University of Utah, Salt Lake City, Utah 84112 (United States)
3. Bell Northern Research, Ltd., Ottawa, Ontario K1Y 4H7 (Canada)

Unique optical signatures of different atomic arrangements of Al[sub 0.5]Ga[sub 0.5]As, deposited by molecular-beam epitaxy and having nominally identical average composition, have been observed in steady-state photoluminescence and photoluminescence excitation spectroscopies. Compared to the observations from a random pseudobinary alloy and a (AlAs)[sub 2](GaAs)[sub 2] ordered superlattice, intense photoluminescence emission is observed from disordered (AlAs)[sub [ital n]](GaAs)[sub 4[minus][ital n]] superlattices where [ital n] is randomly chosen from the sets 0[le][ital n][le]4 or 1[le][ital n][le]3. The photoluminescence peak energies of the randomly ordered superlattices are red-shifted by 100--400 meV from the emission energy of the pseudobinary alloy, suggesting that a significant density of localized or band tail states exists at energies lower than the band gap, which are confirmed by photoluminescence excitation spectroscopy. We also measure greatly increased photoluminescence intensity from the randomly ordered superlattices at high temperatures indicating that these materials may be suitable for optoelectronic applications in previously unattainable energy regions.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5149076
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 12:2; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC STRUCTURE
ENERGY-LEVEL DENSITY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PNICTIDES
SUPERLATTICES
TEMPERATURE DEPENDENCE