Strain-dependent morphology of spontaneous lateral composition modulations in (AlAs){sub m}(InAs){sub n} short-period superlattices grown by molecular beam epitaxy
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
The nature of spontaneous lateral composition modulation and its relationship to surface morphology during the growth of (AlAs){sub m}(InAs){sub n} short-period superlattices by molecular beam epitaxy are investigated as a function of the global strain between the short-period superlattice and (001)InP substrate. For samples grown under tension, transmission electron and atomic force microscopy reveal composition modulations along directions close to {l_angle}310{r_angle} coupled to a surface cusping. For samples grown under compression, we observe composition modulations roughly along the elastically soft {l_angle}100{r_angle} directions coupled to a surface rippling. For high strains ({ge}0.7{percent}), with individual InAs layer thicknesses {le}1.6 monolayers, we observe weak or no composition modulations. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 659289
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 73; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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