Simple batch processing for forming high-reflective mirrors of short-cavity AlGaAs/GaAs lasers

Journal Article · Wed Feb 28 23:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.50874· OSTI ID:6972729

Shieh, C ^[1]; Mantz, J ^[2]; Alavi, K ^[3]; Engelmann, R ^[4]

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1. GTE Labs., Inc., Waltham, MA (USA)
2. High Technology Center, Boeing Electronics Co., Seattle, WA (US)
3. Texas Univ., Arlington, TX (USA). Dept. of Electrical Engineering
4. Institute of Science and Technology, Beaverton, OR (US)

A simple technology for fabricating a short-cavity AlGaAs/GaAs laser with a high-relative mirror is described that is compatible with batch processing. Chlorine-assisted ion beam etching was used for providing one of the facet reflectors. For increased reflectivity, the etched facet was anodized and then metallized simultaneously with the p-contact metallization step. A threshold current of 8 mA for a six-quantum-well separate confinement structure was achieved with a cavity length of 50 {mu}m.

• OSTI ID: 6972729
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:3; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
BEAMS
CHLORINE
CURRENTS
DESIGN
DIMENSIONS
ELECTRIC CURRENTS
ELEMENTS
ETCHING
FABRICATION
HALOGENS
ION BEAMS
LASER CAVITIES
LASER MIRRORS
LASERS
LENGTH
MIRRORS
NONMETALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE FINISHING
SURFACE PROPERTIES
THRESHOLD CURRENT