Dry-etched-cavity pair-groove-substrate GaAs/AlGaAs multiquantum well lasers

Journal Article · Mon Mar 24 04:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96708· OSTI ID:6122568

Yuasa, T; Mannoh, M; Asakawa, K; Shinozaki, K; Ishii, M

A fabrication technique based on reactive ion beam etching is presented for the formation of the facet mirrors on GaAs/AlGaAs lasers called pair-groove-substrate (PGS) multiquantum well lasers. Laser cavities with vertical and smooth walls are achieved with this etching technique by using a high-temperature baked photoresist mask. PGS lasers with 200-..mu..m-long etched cavities show a low pulsed threshold current of 29 mA and a high external differential quantum efficiency of 43%. The threshold current is comparable to those of cleaved lasers. Room-temperature cw operation is easily realized in junction-up mounting.

• Research Organization: Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 6122568
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
ETCHING
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER CAVITIES
LASER MIRRORS
LASERS
MASKING
MIRRORS
NUMERICAL DATA
OPERATION
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING
THRESHOLD CURRENT
WALLS