Performance of dry-etched short cavity GaAs/AlGaAs multiquantum-well lasers

Journal Article · Tue Mar 01 00:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339958· OSTI ID:5369429

Yuasa, T; Yamada, T; Asakawa, K; Ishii, M; Uchida, M

Fabrication and lasing characteristics of short cavity GaAs/AlGaAs multiquantum-well (MQW) lasers with dry-etched facets are described in detail. The lasers are fabricated from GaAs/AlGaAs double-heterostructure wafers grown by molecular-beam epitaxy. Fabry--Perot cavities are formed by a reactive ion-beam etching technique with Cl/sub 2/ plasma. The dependence of lasing characteristics on the cavity length is examined. A threshold current as low as 30 mA is achieved for 20-..mu..m-long cavity MQW lasers with 12 110-A-thick GaAs wells separated by 11 50-A-thick Al/sub 0.2/Ga/sub 0.8/As barriers. The very short cavity lasers with large mode spacing realize the stable single-longitudinal-mode operation. Furthermore, the lasers show good high-frequency performance. A relaxation oscillation frequency as high as 32 GHz is observed with a 30-..mu..m-long laser. Temperature characteristics are also presented.

• Research Organization: Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 5369429
• Journal Information: J. Appl. Phys.; (United States), Vol. 63:5
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
ETCHING
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
FABRICATION
LASER CAVITIES
OPERATION
PERFORMANCE
CHLORINE
EXPERIMENTAL DATA
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
THICKNESS
THRESHOLD CURRENT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
DIMENSIONS
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
HALOGENS
INFORMATION
JUNCTIONS
LASERS
NONMETALS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)