Characteristics of molecular-beam epitaxially grown pair-groove-substrate GaAs/AlGaAs multiquantum-well lasers
Growth and device characteristics of an index-guided GaAs/AlGaAs multiquantum-well (MQW) laser, called a pair-groove-substrate (PGS) MQW laser, are described in detail. The laser structure is fabricated by using single-step molecular-beam epitaxy on a (001) GaAs substrate with a pair of etched grooves along the <11-bar0> direction. A mesa between a pair of grooves, where the lasing action occurs, becomes narrow during growth, and the narrow mesa offers lateral waveguiding that stabilizes a fundamental transverse mode. The superior crystalline quality of the mesa top, which is examined by a microprobe photoluminescence technique, serves to lower the lasing threshold currents. The lasers with mesa widths below 2 ..mu..m show stable transverse mode operation with a low threshold current of 20 mA, as well as a high external differential quantum efficiency of 68%. The low threshold and high characteristic temperature accomplish a high-temperature continuous-wave operation at 153 /sup 0/C for the lasers mounted on silicon heat sinks.
- Research Organization:
- Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
- OSTI ID:
- 6364142
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:3; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
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THRESHOLD CURRENT