Short cavity GaAs/AlGaAs multiquantum well lasers by dry etching

Journal Article · Mon Oct 20 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97630· OSTI ID:5185734

Yuasa, T; Yamada, T; Asakawa, K; Sugata, S; Ishii, M; Uchida, M

A reactive ion beam etching method with Cl/sub 2/ plasma is applied to fabricate short cavity GaAs/AlGaAs multiquantum well lasers grown by molecular beam epitaxy. Threshold currents as low as 38 mA are achieved for the 20-..mu..m-long cavity lasers. The very short cavity lasers show single longitudinal mode operation under pulsed conditions. Cavity length dependence of the threshold current is also investigated for the dry-etched lasers with cavity lengths varying from 20 to 500 ..mu..m.

• Research Organization: Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 5185734
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:16; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHLORINE
COLLISIONS
CURRENTS
DATA
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
ETCHING
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALOGENS
INFORMATION
ION BEAMS
ION COLLISIONS
LASER CAVITIES
LASERS
MOLECULAR BEAM EPITAXY
NONMETALS
NUMERICAL DATA
OPERATION
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING
THRESHOLD CURRENT