Very high relaxation oscillation frequency in dry-etched short cavity GaAs/AlGaAs multiquantum well lasers

Journal Article · Mon Apr 27 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97936· OSTI ID:6730494

Yuasa, T; Yamada, T; Asakawa, K; Ishii, M; Uchida, M

Relaxation oscillation frequencies are reported for short cavity GaAs/AlGaAs multiquantum well lasers with dry-etched facets. Decreased electron and photon lifetimes combined with the high differential gain constant of short cavity lasers yield very high relaxation oscillation frequencies. A peak value of 24 GHz was achieved with a 40-..mu..m-long laser, and a linear relationship between frequency and the square root of the output power is observed.

• Research Organization: Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 6730494
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:17; ISSN APPLA
• Country of Publication: United States
• Language: English

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42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
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OPERATION
PERFORMANCE
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RELAXATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS