Monolithic two-dimensional GaAs/AlGaAs laser arrays fabricated by chlorine ion-beam-assisted micromachining

Technical Report · Mon Jan 01 04:00:00 EST 1990

OSTI ID:6543637

Goodhue, W D; Rauxchenbach, K; Wang, C A; Donnelly, J P; Bailey, R J

Chlorine ion-beam-assisted etching (IBAE) has been used to micromachine laser facets and deflecting mirrors for monolithic two-dimensional GaAs/AlGaAs laser arrays. Three laser cavity/deflector designs have been successfully implemented. The first utilizes a parabolic deflecting mirror to directly focus the laser radiation; the second consists of a folded cavity with a vertical facet, a top surface facet, and an internal 45 C reflector; and the third has a folded cavity with an internal Al{sub 0.2}Ga{sub 0.8}As/Al{sub 0.8}Ga{sub 0.2}As dielectric mirror stack and a top surface facet formed in a single etch step with two internal 45 C reflectors. The parabolic deflecting mirrors are currently modeled for f-0.8 collection efficiency, making the first design attractive incoherent arrays for high-power applications such as pumping Nd:YAG lasers.

• Research Organization: Massachusetts Inst. of Tech., Lexington, MA (USA). Lincoln Lab.
• OSTI ID: 6543637
• Report Number(s): AD-A-223714/7/XAB; JA--6402; CNN: F19628-90-C-0002
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
DESIGN
ELECTROMAGNETIC RADIATION
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION BEAMS
LASER CAVITIES
LASER RADIATION
LASERS
MACHINING
MIRRORS
PNICTIDES
POWER
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE FINISHING