Two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers

Technical Report · Sat Dec 31 23:00:00 EST 1988

OSTI ID:5289880

Donnelly, J P; Rauschenbach, K; Wang, C A; Goodhue, W D; Bailey, R J

Three approaches to fabricating two-dimensional surface-emitting GaAs/AlGaAs diode laser arrays are discussed: a hybrid approach in which linear arrays of edge-emitting lasers with cleaved end facets are mounted on microchanneled Si heatsinks with integral 45 deflecting mirrors, a monolithic approach in which edge-emitting lasers are fabricated with deflecting mirrors adjacent to both end facets of each laser, and a monolithic approach in which horizontal-cavity lasers are fabricated with intracavity 45 deflecting mirrors. In both monolithic approaches, all the laser facets and deflecting mirrors are fabricated by ion-beam-assisted etching. Arrays of GaAs/AlGaAs diode lasers are currently of great interest, and several different approaches to developing such arrays are being investigated. In this paper, a hybrid and two monolithic approaches to fabricating two-dimensional surface-emitting GaAs/AlGaAs laser diode arrays are discussed.

• Research Organization: Massachusetts Inst. of Tech., Lexington, MA (USA). Lincoln Lab.
• OSTI ID: 5289880
• Report Number(s): AD-A-212014/5/XAB; MS--8170
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT SINKS
HYBRID SYSTEMS
ION BEAMS
LASERS
MIRRORS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SINKS
SOLID STATE LASERS
SURFACE FINISHING