Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers

Technical Report · Mon Oct 12 00:00:00 EDT 1987

OSTI ID:5415740

Donnelly, J P; Goodhue, W D; Windhorn, T H; Bailey, R J; Lambert, S A

Monolithic two-dimensional arrays with light emission normal to the surface were obtained by fabricating edge-emitting quantum well GaAs/AlGaAs lasers with deflecting mirrors adjacent to both laser facets. The facets and mirrors were formed by ion-beam-assisted etching. Proton bombardment between adjoining lasers was used to prevent lasing in the transverse direction. At the highest pulsed current used in these experiments, 10.5 A, the power output of a 22-element array was 1.6 W, which corresponds to a power density of 160 W/sq.cm. At this level, the power output was still linear with current.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• OSTI ID: 5415740
• Report Number(s): AD-A-188292/7/XAB; JA-6009
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION BEAMS
LASERS
LIGHT EMITTING DIODES
MIRRORS
PNICTIDES
POWER DENSITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SURFACE FINISHING