Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface
Journal Article
·
· Appl. Phys. Lett.; (United States)
Light emission normal to the surface of a GaAs/AlGaAs wafer has been obtained by fabricating edge-emitting double-heterostructure diode lasers with a monolithic 45/sup 0/ deflector adjacent to one of the laser facets. The deflector and adjacent facet were formed by ion beam assisted etching, while the other facet was cleaved. Diode laser/deflector devices with two etched laser facets could be used to fabricate monolithic two-dimensional laser arrays.
- Research Organization:
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
- OSTI ID:
- 5720410
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:24; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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