CW operation of monolithic arrays of surface-emitting AlGaAS diode lasers with dry-etched vertical facets and parabolic deflecting mirrors
Journal Article
·
· IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)
- Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
A monolithic two-dimensional array of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and parabolic deflecting mirrors was mounted junction-site up on a W/Cu microchannel heatsink and evaluated under continuous-wave (CW) operating conditions. Both the facets and parabolic deflecting mirrors were etched using chlorine ion-beam-assisted etching. Threshold current densities of different sections of the array were consistently around 240 A/cm[sup 2], and measured CW differential quantum efficiencies were in the 46--48% range. CW power densities as high as 148 W/cm[sup 2] were achieved with an average temperature rise of less than 25 C in this junction-side-up configuration.
- OSTI ID:
- 5435500
- Journal Information:
- IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 5:10; ISSN 1041-1135; ISSN IPTLEL
- Country of Publication:
- United States
- Language:
- English
Similar Records
Two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers
Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers
Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers
Technical Report
·
Sat Dec 31 23:00:00 EST 1988
·
OSTI ID:5289880
Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers
Journal Article
·
Mon Oct 12 00:00:00 EDT 1987
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6249411
Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers
Technical Report
·
Mon Oct 12 00:00:00 EDT 1987
·
OSTI ID:5415740
Related Subjects
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASER MIRRORS
LASERS
MIRRORS
NUMERICAL DATA
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASER MIRRORS
LASERS
MIRRORS
NUMERICAL DATA
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS