980 nm diode laser for pumping Er sup 3 + -doped fiber amplifiers

Journal Article · Thu Mar 01 04:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.50872· OSTI ID:6972568

Bour, D P; Dinkel, N A; Gilbert, D B; Fabian, K B; Harvey, M G ^[1]

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1. David Sarnoff Research Center, Princeton, NJ (USA)

A 980 nm diode laser, whose performance satisfies the requirements for pumping Er{sup 3 +}-doped optical fiber amplifiers, is described. The device is grown by atmospheric pressure organometallic vapor phase epitaxy, and contains a strained, step-graded In{sub 0.25}Ga{sub 0.75}As/AlGaAs single quantum well active region. The threshold current of the ridge-waveguide laser is 8 mA, and a CW power output of 125 mW is demonstrated, with a differential quantum efficiency of 59%.

• OSTI ID: 6972568
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:3; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
440600 -- Optical Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
657002 -- Theoretical & Mathematical Physics-- Classical & Quantum Mechanics
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DOPING
DESIGN
EFFICIENCY
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
ERBIUM ADDITIONS
ERBIUM ALLOYS
FIBERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
OPTICAL FIBERS
OPTICAL PUMPING
PERFORMANCE
PNICTIDES
PULSE AMPLIFIERS
PUMPING
QUANTUM EFFICIENCY
RARE EARTH ADDITIONS
RARE EARTH ALLOYS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
VAPOR PHASE EPITAXY