980 nm diode laser for pumping Er sup 3 + -doped fiber amplifiers

Journal Article · Thu Mar 01 00:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.50872· OSTI ID:6972568

Bour, D P; Dinkel, N A; Gilbert, D B; Fabian, K B; Harvey, M G ^[1]

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1. David Sarnoff Research Center, Princeton, NJ (USA)

A 980 nm diode laser, whose performance satisfies the requirements for pumping Er{sup 3 +}-doped optical fiber amplifiers, is described. The device is grown by atmospheric pressure organometallic vapor phase epitaxy, and contains a strained, step-graded In{sub 0.25}Ga{sub 0.75}As/AlGaAs single quantum well active region. The threshold current of the ridge-waveguide laser is 8 mA, and a CW power output of 125 mW is demonstrated, with a differential quantum efficiency of 59%.

• OSTI ID: 6972568
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Vol. 2:3; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
47 OTHER INSTRUMENTATION
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
PULSE AMPLIFIERS
OPTICAL PUMPING
SEMICONDUCTOR LASERS
DESIGN
ALUMINIUM ARSENIDES
CRYSTAL DOPING
ERBIUM ADDITIONS
GALLIUM ARSENIDES
OPTICAL FIBERS
PERFORMANCE
QUANTUM EFFICIENCY
VAPOR PHASE EPITAXY
ALLOYS
ALUMINIUM COMPOUNDS
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
ERBIUM ALLOYS
FIBERS
GALLIUM COMPOUNDS
LASERS
PNICTIDES
PUMPING
RARE EARTH ADDITIONS
RARE EARTH ALLOYS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)
440600 - Optical Instrumentation- (1990-)
657002 - Theoretical & Mathematical Physics- Classical & Quantum Mechanics