A 970 nm strained-layer InGaAs/GaAlAs quantum well laser for pumping an erbium-doped optical fiber amplifier

Journal Article · Mon Jan 15 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102837· OSTI ID:7245511

Wu, M C; Olsson, N A; Sivco, D; Cho, A Y ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)

We report the performance of a 970 nm strained-layer InGaAs/GaAlAs quantum well laser and its application for pumping Er-doped optical fiber amplifiers. The laser was grown by molecular beam epitaxy and has three In{sub 0.2}Ga{sub 0.8}As/GaAs quantum wells. For a 5-{mu}m-wide and 400-{mu}m-long ridge-waveguide laser, a cw threshold current of 20 mA and an external quantum efficiency of 0.28 mW/mA per facet were obtained. Maximum output power exceeds 32 mW/facet. With antireflection coating, even higher external quantum efficiency (0.40 mW/mA) was achieved, and more than 20 mW of power was coupled into a single mode fiber. Preliminary experiments of pumping the Er-doped fiber amplifier gave 15 dB of gain at 1.555 {mu}m for a pump power of 14 mW into the Er fiber.

• OSTI ID: 7245511
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:3; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFIERS
ANTIREFLECTION COATINGS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CRYSTAL DOPING
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
ELECTRONIC EQUIPMENT
ELEMENTS
EPITAXY
EQUIPMENT
ERBIUM
EXPERIMENTAL DATA
FIBER OPTICS
FIBERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
LASERS
METALS
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPTICAL FIBERS
OPTICAL PUMPING
PERFORMANCE
PNICTIDES
POWER RANGE MILLI W
PUMPING
QUANTUM EFFICIENCY
RARE EARTHS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT