Rapid thermal annealing of ion implanted silicon

Thesis/Dissertation · Wed Jan 01 04:00:00 EST 1986

OSTI ID:6971442

Ho, C C

The rapid thermal annealing (RTA) behavior of layers implanted with dopants from column III (B: 25 kev, 1 x 10/sup 14/, 1 x 10/sup 15/ cm/sup -2/; B: 5 keV, 1 x 10/sup 14/, 3 x 10/sup 15/ cm/sup -2/; and BF/sup 2/: 45 KeV, 1 x 10/sup 14/, 1 x 10/sup 15/ cm/sup -2/) and column V (Sb: 100 keV, 1 x 10/sup 15/, 1 x 10/sup 16/ cm/sup -2/; As: 60 keV, 5 x 10/sup 14/, 5 x 10/sup 15/ cm/sup -2/; and P:40 keV, 1 x 10/sup 14/, 1 x 10/sup 15/ cm/sup -2/) in silicon was examined. The optimal process parameters for producing high quality shallow p-n junctions were investigated. The annealing was performed using an Eaton RTA system (Nova ROA-400) at temperatures ranging from 950/sup 0/C to 1250/sup 0/C. Annealing times ranged from 0.2 sec to 10 sec. The damage and defective region depth of the annealed specimens were studied using transmission electron microscopy (TEM). Secondary ion mass spectrometry (SIMS) was used to determine the dopant profiles after annealing. The electrical characteristics of p-n junctions formed under various RTA conditions were evaluated by measuring the leakage current at a bias of -5 volts. Activation efficiency, sheet resistivity, and mobility as functions of RTA temperatures and times were determined using Hall effect measurement techniques. TEM and SIMS studies are correlated with results from diode leakage current and Hall effect measurements.

• Research Organization: Notre Dame Univ., IN (USA)
• OSTI ID: 6971442
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ANTIMONY IONS
ARSENIC IONS
BORON IONS
CHARGED PARTICLES
ELEMENTS
ENERGY RANGE
HALL EFFECT
HEAT TREATMENTS
ION IMPLANTATION
IONS
JUNCTIONS
KEV RANGE
P-N JUNCTIONS
PHOSPHORUS IONS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
VERY HIGH TEMPERATURE