Elimination of end-of-range and mask edge lateral damage in Ge/sup +/ preamorphized, B/sup +/ implanted Si

Journal Article · Mon Nov 10 04:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97382· OSTI ID:5190419

Ajmera, A C; Rozgonyi, G A

The problems of residual extended defects due to end-of-range ion implantation damage and mask edge lateral damage have been solved in this study for shallow boron junctions preamorphized via germanium ion implantation. Defect elimination has been achieved by adjusting the germanium ion energy, dose, and annealing temperature and ambient to minimize the local interstitial point defect concentration and optimize the role of the free surface in defect annihilation. For the combination of shallow, low dose 40 or 60 keV/2 x 10/sup 14/ cm/sup -2/ Ge/sup +/ and 8 keV/1 x 10/sup 15/ cm/sup -2/ B/sup +/ implants, a defect-free structure was obtained following a 1050 /sup 0/C, 10 s rapid thermal anneal (RTA) in a nonoxidizing Ar ambient. For these samples, boron profiles determined using secondary ion mass spectroscopy (SIMS) showed the junction depth to be approximately 0.17 ..mu..m at a background doping of 1 x 10/sup 17/ cm/sup -3/ with a sheet resistance of 136 ..cap omega../D'Alembertian.

• Research Organization: Materials Engineering Department, North Carolina State University, Raleigh, North Carolina 27695-7916
• OSTI ID: 5190419
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:19; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
BORON
BORON IONS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DAMAGE
ELECTRONIC CIRCUITS
ELEMENTS
GERMANIUM IONS
HEAT TREATMENTS
INTEGRATED CIRCUITS
INTERSTITIALS
ION IMPLANTATION
IONS
MASS SPECTROSCOPY
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
SPECTROSCOPY
VERY HIGH TEMPERATURE