Fluorine-enhanced boron diffusion in germanium-preamorphized silicon

Journal Article · Sat Oct 01 04:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2084336· OSTI ID:20714126

Jacques, J M; Jones, K S; Robertson, L S; Li-Fatou, A; Hazelton, C M; Napolitani, E; Rubin, L M ^[1]

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1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

Silicon wafers were preamorphized with 60 keV Ge{sup +} or 70 keV Si{sup +} at a dose of 1x10{sup 15} atoms/cm{sup 2}. F{sup +} was then implanted into some samples at 6 keV at doses ranging from 1x10{sup 14} to 5x10{sup 15} atoms/cm{sup 2}, followed by {sup 11}B{sup +} implants at 500 eV, 1x10{sup 15} atoms/cm{sup 2}. Secondary-ion-mass spectrometry confirmed that fluorine enhances boron motion in germanium-preamorphized materials in the absence of annealing. The magnitude of boron diffusion scales with increasing fluorine dose. Boron motion in as-implanted samples occurs when fluorine is concentrated above 1x10{sup 20} atoms/cm{sup 3}. Boron atoms are mobile in as-implanted, amorphous material at concentrations up to 1x10{sup 19} atoms/cm{sup 3}. Fluorine directly influences boron motion only prior to activation annealing. During the solid-phase epitaxial regrowth process, fluorine does not directly influence boron motion, it simply alters the recrystallization rate of the silicon substrate. Boron atoms can diffuse in germanium-amorphized silicon during recrystallization at elevated temperatures without the assistance of additional dopants. Mobile boron concentrations up to 1x10{sup 20} atoms/cm{sup 3} are observed during annealing of germanium-preamorphized wafers.

• OSTI ID: 20714126
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 98; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ANNEALING
BORON
CRYSTAL GROWTH
DIFFUSION
DOPED MATERIALS
EPITAXY
EV RANGE 100-1000
FLUORINE
FLUORINE IONS
GERMANIUM
GERMANIUM IONS
ION IMPLANTATION
ION MICROPROBE ANALYSIS
KEV RANGE 01-10
KEV RANGE 10-100
MASS SPECTROSCOPY
RECRYSTALLIZATION
SEMICONDUCTOR MATERIALS
SILICON