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Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

Conference ·
OSTI ID:6965182
 [1]; ;  [2]; ;  [3]
  1. North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering Microelectronics Center of North Carolina, Research Triangle Park, NC (USA)
  2. North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering
  3. Argonne National Lab., IL (USA)
Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr{sup +} or Xe{sup +} ions is preferable to the most commonly used Ar{sup +} ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs.
Research Organization:
Argonne National Lab., IL (USA)
Sponsoring Organization:
DOD; DOE/ER; NSF
DOE Contract Number:
W-31109-ENG-38; FG05-88ER45359
OSTI ID:
6965182
Report Number(s):
CONF-891119-123; ON: DE90010071; CNN: N-00014-88-K-0525; N-00014-88-K-0526; DMR-8807367
Country of Publication:
United States
Language:
English