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Sequential Ar-O(2) sputtering of Y(2)O(3), BaF(2), and CuO targets for preparation of Y-Ba-Cu-O superconducting films without wet-O(2) annealing

Technical Report ·
OSTI ID:6965178
Superconducting Y-Ba-Cu-O (YBCO) films have been prepared by ex situ O{sub 2} annealing of multilayer films deposited on yttria-stabilized zirconia substrates by sequential rf diode sputtering of Y{sub 2}O{sub 3}, BaF2, and CuO targets, all of which are chemically stable. If sputtering is performed in an Ar ambient, the as-deposited films contain sufficient F to require its removal by annealing in wet O{sub 2} at about 800 C or above before the superconducting YBCO phase can be formed by annealing in dry O{sub 2}. However, sputtering in an Ar-O{sub 2} ambient greatly reduces the F content, making it possible to obtain the superconducting phase by annealing in dry O{sub 2} only. If the ambient contains about 20% O{sub 2}, films with Tc (R = 0) > 85 K can be prepared without wet-O{sub 2} annealing. The Ar-O{sub 2} process therefore has the potential for in situ preparation of superconducting YBCO films.
Research Organization:
Massachusetts Inst. of Tech., Lexington, MA (USA). Lincoln Lab.
OSTI ID:
6965178
Report Number(s):
AD-A-217508/1/XAB; JA--6363
Country of Publication:
United States
Language:
English