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Sequential Ar-O sub 2 sputtering of Y sub 2 O sub 3 , BaF sub 2 , and CuO targets for preparation of Y-Ba-Cu-O superconducting films without wet-O sub 2 annealing

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.102294· OSTI ID:5148145
; ;  [1]
  1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108 (US)
Superconducting Y-Ba-Cu-O (YBCO) films have been prepared by {ital ex situ} O{sub 2} annealing of multilayer films deposited on yttria-stabilized zirconia substrates by sequential rf diode sputtering of Y{sub 2}O{sub 3}, BaF{sub 2}, and CuO targets, all of which are chemically stable. If sputtering is performed in an Ar ambient, the as-deposited films contain sufficient F to require its removal by annealing in wet O{sub 2} at about 800 {degree}C or above before the superconducting YBCO phase can be formed by annealing in dry O{sub 2}. However, sputtering in an Ar-O{sub 2} ambient greatly reduces the F content, making it possible to obtain the superconducting phase by annealing in dry O{sub 2} only. If the ambient contains about 20% O{sub 2}, films with {ital T}{sub {ital c}} ({ital R}=0){gt}85 K can be prepared without wet-O{sub 2} annealing. The Ar-O{sub 2} process therefore has the potential for {ital in} {ital situ} preparation of superconducting YBCO films.
OSTI ID:
5148145
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:23; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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