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Effect of sputtering current on the growth of Y-Ba-Cu-O films

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.103252· OSTI ID:6815792
 [1]
  1. Materials Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu 31015, Taiwan, Republic of China (TW)
Y-Ba-Cu-O (YBCO) films were grown on (100)MgO and (100)Si substrates by the high-pressure dc diode sputtering process. The target was a Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub {ital x}} compound, made by a solid-state reaction. The sputtering gas was Ar-50% O{sub 2} and the total pressure was 1.5 Torr. As-deposited superconducting YBCO films can be prepared at low substrate temperatures (420 {degree}C) with a high discharge current. The phases of the as-deposited films strongly relate to the discharge current and substrate temperature. The high concentration of active species (excited atoms and ions) in the plasma during deposition is the main factor that permits superconducting YBCO films to be formed at such low substrate temperatures.
OSTI ID:
6815792
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:24; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English