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Reactive ion beam etching of ZnSe and ZnS epitaxial films using Cl sub 2 electron cyclotron resonance plasma

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.102678· OSTI ID:6964290
; ;  [1]
  1. Opto-Electronics Research Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., 3-15, Yagumo-nakamachi, Moriguchi, Osaka 570, (Japan)
Reactive ion beam etching of ZnSe and ZnS epitaxial films was carried out using pure Cl{sub 2} as an etching gas. Electron cyclotron resonance plasma was excited at pressures of 2.5{times}10{sup {minus}4} --2.5{times}10{sup {minus}3} Torr. Chlorine ions were extracted with voltages of 0--400 V. Sputtering yields were strongly dependent on the extraction voltage and the gas pressure. The etching mechanism starts with the generation of chloride compounds, mainly ZnCl{sub {ital x}}, by the chemical reaction of the surface and chlorine radicals, mainly Cl atoms. The chloride compounds are subsequently sputtered off by the accelerated ion beam. The crystalline quality of etched ZnSe films was characterized by photoluminescence measurements. We found that high quality etched films, which have almost no damage and no Cl contamination, can be obtained at an extraction voltage of about 300 V.
OSTI ID:
6964290
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:9; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English