High dose Cl implantation in ZnSe: Impurity incorporation and radiation damage

Journal Article · Tue Feb 01 04:00:00 EST 1994 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.356417· OSTI ID:5445857

Yu, K M; Ager, III, J W; Bourret, E D; Walker, J; Walukiewicz, W ^[1]

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1. Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

The structural characteristics of ZnSe thin films grown by organometallic vapor phase epitaxy and implanted heavily with Cl ions (5[times]10[sup 15] and 1[times]10[sup 16]/cm[sup 2]) were investigated using ion beam techniques, x-ray diffraction, and Raman spectroscopy. We have found that although the as-implanted ZnSe layers were severely damaged, no amorphous layer was formed with an implant dose as high as 1[times]10[sup 16] Cl ions/cm[sup 2]. Crystalline damage in the ZnSe layers was not fully removed even after annealing at 700 [degree]C for 10 s. Ion channeling reveals that after annealing over 50% of the Cl atoms sit substitutionally in the lattice and they are preferentially located in the Se site. However, a significant fraction of the substitutional Cl are found to be slightly displaced from the normal Se sites. The projected displacement was found to be [approx]0.2 A. Electrical measurements and Raman spectroscopy results suggest that a large concentration of Zn vacancies ([ital V][sub Zn]) are present in the annealed samples. We believe that the Cl displacement and the low conductivity in these samples are due to the formation of (Cl[sub Se][minus][ital V][sub Zn]) complexes.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5445857
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 75:3; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ANNEALING
CHALCOGENIDES
CHARGED PARTICLES
CHLORINE IONS
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
FILMS
HEAT TREATMENTS
ION IMPLANTATION
IONS
PHYSICAL PROPERTIES
POINT DEFECTS
RAMAN SPECTRA
SCATTERING
SELENIDES
SELENIUM COMPOUNDS
SPECTRA
THIN FILMS
VACANCIES
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION
ZINC COMPOUNDS
ZINC SELENIDES