Anomalous ion damage behavior in ZnSe

Journal Article · Sun Sep 01 04:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.116880· OSTI ID:383732

Yu, K M; Bourret-Courchesne, E D ^[1]

---

1. Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

The structural properties of ZnSe damaged by 180 keV Zn ions are studied for a wide range of ion dose (10{sup 13}{endash}10{sup 16}/cm{sup 2}) using ion channeling techniques. We found that ZnSe cannot be rendered amorphous by implantation at either room temperature (RT) or liquid nitrogen temperature (LNT) in the range of doses investigated. For lower ion doses (10{sup 13}{endash}10{sup 14}/cm{sup 2}), ZnSe samples implanted at LNT result in less damage than those implanted at RT by as much as an order of magnitude. Moreover, no simple point defect or amorphous clusters are found in the implanted ZnSe. For high implant doses ({approx_gt}10{sup 14}/cm{sup 2}), the samples are still monocrystalline but become highly defective with extended defects. Our results also suggests that point defects in the ZnSe created during implantation may be mobile at or below RT and that they may migrate rapidly under ion irradiation. {copyright} {ital 1996 American Institute of Physics}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 383732
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 69; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
ION CHANNELING
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
VAPOR PHASE EPITAXY
VPE
ZINC SELENIDES