Study of damage induced by room-temperature Al ion implantation in Hg{sub 0.8}Cd{sub 0.2}Te by x-ray diffuse scattering
- Laboratoire de Metallurgie Physique, UMR 6630-CNRS, Universite de Poitiers, UFR Sciences, SP2MI, Bd. 3, Teleport 2, B.P. 179, 86960 Futuroscope Cedex (France)
- LURE, Centre Universitaire Paris-Sud, Bat. 209D, 91405 Orsay Cedex (France)
- INSTN/SEPEM, CE-Saclay, 91191 Gif-sur-Yvette Cedex (France)
Ion-implantation is a widely used doping technique in II{endash}VI semiconductors. Nevertheless, ion-implantation damage has to be better understood to properly control this process. In order to investigate the implantation-induced defects in such compounds, room-temperature implantations of 320 keV Al ions have been performed on crystalline samples of [111] Hg{sub 1{minus}x}Cd{sub x}Te (x{approx}20{percent}) for doses ranging from 10{sup 13} to 10{sup 15}cm{sup {minus}2}. We report the first measurements of x-ray diffuse scattering close to different Bragg reflections on such as-implanted samples. The evolution of the diffuse intensity as a function of the dose has been observed. The defect-induced diffuse intensity arises mainly from interstitial dislocation loops. Nevertheless, vacancy loops are observed above 3{times}10{sup 14}Al/cm{sup 2}. The mean radius of the dislocation loops increases in size by three to four times when the dose rises from 10{sup 13} to 10{sup 15}cm{sup {minus}2}. Finally, the saturation of point defects has been observed independently of their clustering at about 5{times}10{sup 13}Al/cm{sup 2}, that is in the same range as the saturation dose of the sheet electron concentration. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 531735
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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