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Title: {ital p}-type ion-implantation doping of Al{sub 0.75}Ga{sub 0.25}Sb with Be, C, Mg, and Zn

Abstract

{ital p}-type ion-implantation doping of Al{sub 0.75}Ga{sub 0.25}Sb is reported. The surface morphology and electrical properties of Al{sub 0.75}Ga{sub 0.25}Sb are shown by atomic force microscopy and Hall measurements to be degraded after rapid thermal annealing of 650{degree}C. Implantation of Be and Mg results in sheet hole concentrations twice that of the implanted acceptor dose of 1{times}10{sup 13} cm{sup {minus}2} following a 600{degree}C anneal. This is explained in terms of double acceptor or antisite defect formation. Implanted C acts as an acceptor but also demonstrates excess hole conduction attributed to implantation-induced defects. Implanted Zn requires higher annealing temperatures than Be and Mg to achieve 100{percent} effective activation for a dose of 1{times}10{sup 13} cm{sup {minus}2} probably as a result of more implantation-induced damage created from the heavier Zn ion. Secondary ion mass spectroscopy of as-implanted and annealed Be, Mg, and C samples are presented. Diffusion of implanted Be (5{times}10{sup 13} cm{sup {minus}2}, 45 keV) is shown to have an inverse dependence on temperature that is attributed to a substitutional-interstitial diffusion mechanism. Implanted Mg (1{times}10{sup 14} cm{sup {minus}2}, 110 keV) shows dramatic redistribution and loss at the surface of up to 56{percent} after a 600{degree}C anneal. Implanted C (2.5{times}10{sup 14} cm{supmore » {minus}2}, 70 keV) displays no redistribution even after a 650{degree}C anneal. This work lays the foundation for using ion-implantation doping in high performance AlGaSb/InGaSb-based {ital p}-channel field-effect transistors.« less

Authors:
; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
Publication Date:
Research Org.:
Sandia National Laboratory
OSTI Identifier:
277184
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 79; Journal Issue: 3; Other Information: PBD: Feb 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ION IMPLANTATION; GALLIUM ANTIMONIDES; MAGNESIUM ADDITIONS; ANNEALING; BERYLLIUM ADDITIONS; CARBON ADDITIONS; CRYSTAL DEFECTS; CRYSTAL DOPING; DIFFUSION; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; MANGANESE ADDITIONS; ZINC ADDITIONS; ALUMINIUM ANTIMONIDES; SURFACE STRUCTURE

Citation Formats

Zolper, J C, Klem, J F, Howard, A J, and Hafich, M J. {ital p}-type ion-implantation doping of Al{sub 0.75}Ga{sub 0.25}Sb with Be, C, Mg, and Zn. United States: N. p., 1996. Web. doi:10.1063/1.361034.
Zolper, J C, Klem, J F, Howard, A J, & Hafich, M J. {ital p}-type ion-implantation doping of Al{sub 0.75}Ga{sub 0.25}Sb with Be, C, Mg, and Zn. United States. doi:10.1063/1.361034.
Zolper, J C, Klem, J F, Howard, A J, and Hafich, M J. Thu . "{ital p}-type ion-implantation doping of Al{sub 0.75}Ga{sub 0.25}Sb with Be, C, Mg, and Zn". United States. doi:10.1063/1.361034.
@article{osti_277184,
title = {{ital p}-type ion-implantation doping of Al{sub 0.75}Ga{sub 0.25}Sb with Be, C, Mg, and Zn},
author = {Zolper, J C and Klem, J F and Howard, A J and Hafich, M J},
abstractNote = {{ital p}-type ion-implantation doping of Al{sub 0.75}Ga{sub 0.25}Sb is reported. The surface morphology and electrical properties of Al{sub 0.75}Ga{sub 0.25}Sb are shown by atomic force microscopy and Hall measurements to be degraded after rapid thermal annealing of 650{degree}C. Implantation of Be and Mg results in sheet hole concentrations twice that of the implanted acceptor dose of 1{times}10{sup 13} cm{sup {minus}2} following a 600{degree}C anneal. This is explained in terms of double acceptor or antisite defect formation. Implanted C acts as an acceptor but also demonstrates excess hole conduction attributed to implantation-induced defects. Implanted Zn requires higher annealing temperatures than Be and Mg to achieve 100{percent} effective activation for a dose of 1{times}10{sup 13} cm{sup {minus}2} probably as a result of more implantation-induced damage created from the heavier Zn ion. Secondary ion mass spectroscopy of as-implanted and annealed Be, Mg, and C samples are presented. Diffusion of implanted Be (5{times}10{sup 13} cm{sup {minus}2}, 45 keV) is shown to have an inverse dependence on temperature that is attributed to a substitutional-interstitial diffusion mechanism. Implanted Mg (1{times}10{sup 14} cm{sup {minus}2}, 110 keV) shows dramatic redistribution and loss at the surface of up to 56{percent} after a 600{degree}C anneal. Implanted C (2.5{times}10{sup 14} cm{sup {minus}2}, 70 keV) displays no redistribution even after a 650{degree}C anneal. This work lays the foundation for using ion-implantation doping in high performance AlGaSb/InGaSb-based {ital p}-channel field-effect transistors.},
doi = {10.1063/1.361034},
journal = {Journal of Applied Physics},
number = 3,
volume = 79,
place = {United States},
year = {1996},
month = {2}
}