Reduction of secondary defect formation in MeV B sup + ion-implanted Si (100)

Journal Article · Sun Oct 29 23:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102181· OSTI ID:5263084

Lu, W X; Qian, Y H; Tian, R H; Wang, Z L ^[1]; Schreutelkamp, R J; Liefting, J R; Saris, F W ^[2]

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1. Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100 875, People's Republic of China (CN)
2. FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands

MeV ion implantation in Si above a dose of 10{sup 14}/cm{sup 2} leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B{sup +} ions to a dose of 2.2{times}10{sup 14}/cm{sup 2} has been investigated by means of cross-sectional transmission electron microscopy. After annealing at 900 {degree}C for 15 min, dislocation loops elongated along (110) were found. A remarkable decrease in secondary defect formation has been observed if, in addition, 140 keV Si{sup +} was implanted prior to annealing.

• OSTI ID: 5263084
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:18; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
BORON 11
BORON IONS
BORON ISOTOPES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
EVEN-ODD NUCLEI
HEAT TREATMENTS
ION IMPLANTATION
IONS
ISOTOPES
KEV RANGE
KEV RANGE 100-1000
LAYERS
LIGHT NUCLEI
LINE DEFECTS
MEV RANGE
MEV RANGE 01-10
MICROSCOPY
NUCLEI
ODD-EVEN NUCLEI
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
SILICON 29
SILICON IONS
SILICON ISOTOPES
STABLE ISOTOPES
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE