Electron and neutron radiation-induced order effect in gallium arsenide
- Defence Research Establishment, Ottawa, Ontario (Canada)
- Univ. de Sherbrooke, Quebec (Canada). Dept. de Physique
- Aberdeen Proving Ground, Aberdeen, MD (United States)
The authors investigate electron (7 MeV) and neutron (1 MeV equivalent fluence damage in silicon) radiation effects in gallium arsenide grown by the metallorganic chemical vapor deposition method. One series of samples was intentionally undoped, and another was doped n-type to 2.5[times]10[sup 15]Si/cm[sup 3]. The sample irradiations were done at room temperature. The fluences ranged from 10[sup 10] to 6[times]10[sup 15]cm[sup [minus]2] for electron irradiation and from 10[sup 12] to 3[times]10[sup 15]cm[sup [minus]2] for fission spectrum neutron irradiation expressed as 1 MeV equivalent fluence in silicon. The radiation damage was characterized by low temperature photoluminescence (PL) measurements using 1.58 eV laser excitation, deep level transient spectroscopy (DLTS), and transport measurements. The PL intensity increases with fluence at first and reaches its maximum at about 10[sup 13] n/cm[sup 2] or at about 10[sup 12] e/cm[sup 2], before decreasing at higher fluence. Oscillations in the PL intensity for the acceptor levels were observed as a function of electron fluence. DLTS reveals that the density of electron trap EL12 is reduced at a rate of 10[sup 4] cm[sup [minus]1] at 10[sup 10]e/cm[sup 2], but it is reintroduced at higher fluences. Electron irradiation reduces a hole trap concentration at low fluences. Neutron irradiation reduces EL12 concentration at a rate of 0.5 cm[sup [minus]1] at 3[times]10[sup 13]n/cm[sup 2], and reintroduces it at higher fluences. Both electron and neutron irradiation introduce EL6 at 3[times]10[sup 12]e/cm[sup 2] and 10[sup 13]n/cm[sup 2] at a rate of 0.30 [+-] 0.04 cm[sup [minus]1]. Only neutron irradiation introduces the U band starting from 3x10[sup 12] n/cm[sup 2]. Trap EL14 is introduced at a rate of 1.7 [+-] 0.4 cm[sup [minus]1] starting from 10[sup 14] n/cm[sup 2]. Electron irradiation introduces EL14 above 10[sup 14]e/cm[sup 2].
- OSTI ID:
- 6955266
- Report Number(s):
- CONF-930704--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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