Radiation effects on GaAs Charge Coupled Devices with high resistivity gate structures
The results of a study on the effects of 1 MeV electrons and 1 MeV neutrons on the operation of high speed GaAs Charge Coupled Devices (CCDs) are presented. Radiation-induced trapping levels are characterized using a linear array CCD structure and the periodic pulse technique. 1 MeV electron irradiation introduced traps at 0.1 eV and 0.39 eV with bulk trap introduction rates of 1 cm/sup -1/ and 0.33 cm/sup -1/, respectively. The devices were irradiated to a maximum fluence of 9 x 10/sup 14/ electrons/cm/sup 2/. 1 MeV neutron irradiation introduced an electron trap level at 0.64 eV with a bulk trap introduction rate of 0.5 cm/sup -1/. Catastrophic device failure occurred at neutron fluences of 6 x 10/sup 13/ neutrons/cm/sup 2/. Device charge transfer efficiency was characterized pre- and post-irradiation over the temperature range of 80/sup 0/K to 300/sup 0/K.
- Research Organization:
- Air Force Wright Aeronautical Labs., Wright Patterson AFB, OH 45344
- OSTI ID:
- 5325406
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-33:4; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
BEAMS
CHARGE-COUPLED DEVICES
DAMAGING NEUTRON FLUENCE
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ELECTRONIC CIRCUITS
ELECTRONS
ELEMENTARY PARTICLES
ENERGY RANGE
EXPERIMENTAL DATA
FAILURES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GATING CIRCUITS
HADRONS
INFORMATION
IRRADIATION
LEPTON BEAMS
LEPTONS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MEV RANGE
MEV RANGE 01-10
NEUTRON BEAMS
NEUTRON FLUENCE
NEUTRONS
NUCLEON BEAMS
NUCLEONS
NUMERICAL DATA
PARTICLE BEAMS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
POST-IRRADIATION EXAMINATION
PULSE TECHNIQUES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRAPPING
TRAPS
VELOCITY