A mobility study of the radiation induced order effect in gallium arsenide

Conference · Wed Nov 30 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6767313

Jorio, A; Parenteau, M; Aubin, M; Carlone, C ^[1]; Khanna, S M ^[2]; Gerdes, Jr, J W ^[3]

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1. Univ. de Sherbrooke, Quebec (Canada). Dept. de Physique
2. Defence Research Establishment Ottawa, Ontario (Canada)
3. Army Pulse Radiation Facility, Aberdeen Proving Ground, MD (United States)

N-type gallium arsenide doped with silicon was irradiated with reactor neutrons to 10[sup 12], 3 [times] 10[sup 12], 10[sup 13], 3 [times] 10[sup 13], 10[sup 14], 3 [times] 10[sup 14], 10[sup 15], and 3 [times] 10[sup 15] cm[sup [minus]2] (1 MeV equivalent fluence). The temperature dependence of the mobility was obtained after irradiation and annealing to 550 C for 30 minutes. The maximum value of the mobility, [mu][sub max], with respect to temperature was obtained as a function of fluence. For samples which have been irradiated and then annealed, [mu][sub max] goes through a maximum at a fluence of 10[sup 13] cm[sup [minus]2] and is 10% higher than in the unirradiated samples. At higher fluences, the mobility degrades. The authors attribute the increase in mobility at lower fluences to a radiation induced order effect. The disappearance of the deep level EL12 could be associated with this effect. At higher fluences where the mobility degrades, they observe by photoluminescence spectroscopy, the gallium vacancy, a point defect introduced by the irradiation, and the transfer of the silicon atom from the gallium site to the arsenic site. This suggests that growth of the gallium vacancy or the silicon at the arsenic site can be associated with mobility degradation.

• OSTI ID: 6767313
• Report Number(s): CONF-940726--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
CARRIER MOBILITY
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPED MATERIALS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATERIALS
MOBILITY
N-TYPE CONDUCTORS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS