Photoluminescence study of gallium arsenide irradiated with 15 MeV alpha particles
Gallium arsenide wafers were irradiated at room temperature with 15 MeV alpha particles and fluences in the range 10{sup 10} to 10{sup 14} {alpha}/cm{sup 2}. This experiment extends the previous investigation of the same samples irradiated by 2.5, 5.0, and 10 MeV to 15 MeV, at which energy nuclear transmutations occur, and were observed via {gamma} ray analysis but no definitive effects of transmutations on photoluminescence measurements were observed. The gallium vacancy introduction rate b(V{sub Ga}) and silicon at the arsenic site introduction rate b(Si{sub As}) due to 15 MeV alpha particles were measured by low temperature photoluminescence spectroscopy and found to be (2.3 {+-} 0.8) x 10{sup 3} and (1.5 {+-} 0.3) x 10{sup 3} cm{sup {minus}1} respectively. The theoretical vacancy introduction rate, as calculated by taking into account only primary interactions, is (1.07 {+-} 0.02) x 10{sup 3} cm{sup {minus}1}.
- Research Organization:
- Univ. de Sherbrooke, Quebec (CA)
- OSTI ID:
- 20014716
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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