Effects of 3 MeV proton irradiation on the excitonic lifetime in gallium arsenide

Journal Article · Mon Nov 30 23:00:00 EST 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.736482· OSTI ID:323917

Khanna, S M ^[1]; Charbonneau, S; Piva, P G ^[2]; Parenteau, M; Carlone, C ^[3]

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1. Dept. of National Defence, Ottawa, Ontario (Canada). Defence Research Establishment Ottawa
2. National Research Council, Ottawa, Ontario (Canada). Inst. for Microstructural Sciences
3. Univ. de Sherbrooke, Quebec (Canada). Dept. de Physique

Gallium arsenide films grown by the metalorganic chemical vapor deposition method and doped n-type with silicon to concentrations of 2 {times} 10{sup 15} and 2 {times} 10{sup 16} cm{sup {minus}3} were exposed at room temperature to 3 MeV proton irradiation in the fluence range 10{sup 9} to 10{sup 14} cm{sup {minus}2}. The photoluminescence spectra of the irradiated samples were obtained in the continuous mode. The free exciton transition at 1.515 eV was observed. The lifetime associated with this transition was measured both a/t 4 K and at 60 K, using a time-correlated single photon counting technique. The damage constant associated with the radiative recombination lifetime of the free exciton in GaAs is (7.7 {+-} 2.2) {times} 10{sup {minus}3} cm{sup 2} s{sup {minus}1} and with the nonradiative lifetime (6.5 {+-} 2.7) {times} 10{sup {minus}3} cm{sup 2} s{sup {minus}1}.

• OSTI ID: 323917
• Report Number(s): CONF-980705--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DOPED MATERIALS
GALLIUM ARSENIDES
N-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
PROTONS
SEMICONDUCTOR SWITCHES