Monitoring SEU parameters at reduced bias

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6953149

Roth, D R; McNulty, P J; Abdel-Kader, W G; Strauss, L ^[1]; Stassinopoulos, E G ^[2]

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1. Clemson Univ., SC (United States). Dept. of Physics and Astronomy
2. NASA Goddard Space Flight Center, Greenbelt, MD (United States)

SEU sensitivity of a CMOS SRAM increases with decreasing bias in such a manner that the critical charge exhibits a linear dependence on bias. This should allow proton and neutron monitoring of SEU parameters even for radiation hardened devices. The sensitivity of SEU rates to the thickness of the sensitive volume is demonstrated and procedures for determining the SEU parameters using protons are outlined.

• OSTI ID: 6953149
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRICAL PROPERTIES
IRRADIATION
MANUFACTURING
MEMORY DEVICES
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS